Atomic Layer Deposition

Atomic Layer Deposition (ALD) is a highly precise thin‑film deposition technique where materials are built up one atomic layer at a time by sequential, self‑limiting surface reactions. Unlike conventional methods, ALD uses alternating pulses of precursor gases (or vapours) that react with the substrate surface in a controlled way, followed by purges. Each cycle deposits a very thin layer (often less than 1 Å per cycle) and then repeats to build up the desired thickness. Because the surface reaction is self‑limiting, ALD achieves exceptional conformity, uniformity and film‐thickness control – even on 3D or high‑aspect‑ratio structures. ALD finds uses across many fields, including (but not limited to): Semiconductors & microelectronics, MEMS / sensors / 3D devices, Optics & photonics, Energy systems, Barrier & encapsulation coatings.