scia Mill 200
The scia Mill 200 is designed for structuring complex multilayers of various materials. It offers precise process control with customisable endpoint detection systems. Featuring full reactive gas compatibility, the system enables reactive etching with enhanced selectivity and rate. Its flexible design allows adaptation for both single-substrate applications and high-volume production cluster configurations, with up to three process chambers and two cassette load locks.
Key Features:
- Etching angle adjustment with tiltable and rotatable substrate holder
- Excellent uniformity without shaper
- Enhanced selectivity and rate with reactive gases
- Process control with exact SIMS based or optical end point detection
- Processing of wafers with photoresist masks due to good wafer cooling
- Fully automatic cassette handling in variable cluster layouts including SECS/GEM
communication
Technical Data:
- Substrate size (up to) - 200 mm dia.
- Substrate holder - Water-cooled, helium backside cooling contact, substrate
rotation 1 to 20 rpm, tiltable in-situ from 0° to 170° in 0.1° steps - Ion beam source - 350 mm circular RF source (RF350-e)
- Neutralizer - RF plasma bridge neutralizer (N-RF)
- Typical removal rates - Cu: 60 nm/min, Pt: 35 nm/min, W:18 nm/min,
SiO2: 20 nm/min (inert), SiO2: 40 - 60 nm/min (reactive) - Uniformity variation - ≤ 1 % (σ/mean)
- Throughput - 12 Wafer/h (100 nm SiO2 on 200 mm wafer)
- Base pressure - < 5 x 10-7 mbar
- System dimension -
(W x D x H)
3.20 m x 2.50 m x 2.50 m, for 3 chambers and cassette handling
(without electrical racks and pumps) - Configurations - Single chamber, optional single substrate load lock
or cassette handling, cluster system with up to 3 process
chambers and cassette handling, optional OES or SIMS based
end point detection - Software interfaces - SECS II / GEM, OPC
Applications:
- Spintronics / Magnetic sensors:
Etching TMR or GMR stacks with precise layer control to achieve correct functionality. E.g., etching at different angles and monitoring by SIMS. - MEMS and micro-devices:
Milling of metal/dielectric stacks to form electrodes, micro-actuators, or MEMS structures. - Optoelectronics / Photonics:
Fabrication of optical gratings, waveguides, surface relief elements for AR/MR applications, or integrated photonic circuits. - Wide-bandgap power electronics:
Etching of GaN, SiC based devices where conventional etch technologies are less effective, taking advantage of reactive ion-beam capability. - Sensor manufacturing: For instance ultra-thin LiTaO₃ for IR sensors, or other compound substrates needing precise thinning, smoothing or structure formation.