scia Mill 150
The scia Mill 150 is designed for structuring complex multilayers of various materials. With full reactive gas compatibility, it enables reactive etching processes with enhanced selectivity and rate. Its space-saving design makes it ideal for small-scale production and R&D applications.
Key Features:
- Etching angle adjustment with tiltable and rotatable substrate holder
- Excellent uniformity without shaper
- Enhanced selectivity and rate with reactive gases
- Process control with exact SIMS based or optical end point detection
- Carrier concept for adaptation to variable substrate sizes
- Processing of wafers with photoresist masks due to good wafer cooling
Technical Data:
- Substrate size (up to) 150 mm dia.
- Substrate holder - Water-cooled, helium backside cooling contact,
substrate rotation 1 to 20 rpm, tiltable in-situ from 0° to 165° in 0.1° steps - Ion beam source - 190 mm circular microwave ECR source (MW218-e)
- Neutralizer - Triple plasma bridge neutralizer (N-3DC)
RF plasma bridge neutralizer (RF-PBN) - Typical removal rates - SiO2: 20 nm/min (inert), SiO2: 40 - 60 nm/min (reactive)
- Uniformity variation - ≤ 3 % (σ/mean)
- Base pressure - < 5 x 10-7 mbar
- System dimension
(W x D x H)
1.90 m x 1.80 m x 1.75 m
(without electrical rack) - Configurations - Single chamber, optional single substrate load lock,
optional OES or SIMS based end point detection - Software interfaces - SECS II / GEM, OPC
Applications:
- Sensor manufacturing (magnetic, piezoelectric, infrared)
- MEMS fabrication (metal structures, micro-actuators)
- Photonics / optics (gratings, surface relief, optoelectronic microstructures)
- Semiconductor R&D (compound semiconductors, thin film stacks)
- Prototyping / small volume production where high precision etch/milling is required