scia Cube 300/750

The scia Cube 300 is designed for large-area, high-density plasma processes. The system enables high-rate deposition with a broad range of deposition parameters. Additionally, it supports etching processes using oxygen or halogen chemistries, offering high anisotropic etching and optimized selectivity.

Key features:

• Large area processing with an array of synchronized linear microwave sources
• Independent RF bias at substrate holder for energetic substrate bombardment
• Substrate cooling (-10 °C) or heating (850 °C)
• In-situ chamber cleaning process

Applications:

• Large-area optics & photonics
  Because of its large substrate capability (300 mm × 200 mm) and ability to do both coating and etching, it’s suited for manufacturing of optical components, waveguides, gratings, mirrors, etc. For example: deposition of DLC on glass moulds, optical coatings on large glass plates. 
  
  
• Semiconductor / micro‐electronics
  When you need uniform dielectric films or etching of large area substrates (perhaps flat panels, or non‐standard size wafers) the Cube 300 offers flexible process capability (PECVD & RIE).
  
  
• MEMS & Sensor fabrication
  For example, etching of fine structures in optical substrates (quartz/fused-silica) for sensors or micro-optical components; also deposition of barrier or insulating films for MEMS where large substrate area might be beneficial.
  
  
• Advanced coatings on non‐standard/large substrates
  When substrates are large (bigger than typical 200 mm wafers) or require high temperature or low temperature processes (down to -10 °C cooling or up to 850 °C heating), the Cube provides that flexibility.
  
  
• Protective/barrier films
  For example, DLC layers for high hardness or scratch resistance (optics, moulds) or dielectric encapsulation/barrier coatings for other industries. (See application note: DLC deposition using Cube 300)