EVG®810 LT

The EVG®810 LT LowTemp™ plasma activation system is a single-chamber, stand-alone unit with manual operation. Designed for ex-situ processes, the system activates wafers individually, with bonding occurring outside the plasma activation chamber. The EVG®810 LT can be seamlessly integrated with EVG’s cleaning and bonding systems, enabling a manual operation direct bonding process for enhanced flexibility and precision.

Features:

• Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
• Fastest kinetics of any wafer bonding mechanism
• No wet processes required
• Highest bond strength at low temperature annealing (up to 400 °C)
• Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
• High degree of materials compatibility (including CMOS)

Technical Data:

• Wafer diameter (substrate size) - 50 - 200, 100 - 300 mm
  
  
• LowTemp™ plasma activation chamber:

1. Process gases: 2 standard process gases (N₂ and O₂)
2. Universal mass flow controller: self-calibrating (up to 20.000 sccm)
3. Vacuum system: 9x10^-2 mbar
4. Opening / closing of chamber: automated
5. Loading / unloading of chamber: manual (wafer / substrate placed on loading pins)

• Optional Features:

1. Chuck for different wafer sizes
2. Metal ion-free activation
3. Additional process gases with gas mixing
4. High vacuum system with turbo pump: 9x10^-3 mbar base pressure

Applications:

• Low-Temperature Fusion and Molecular Bonding
  Ideal for applications requiring direct bonding of wafers at low temperatures, such as fusion or molecular bonding, without compromising the integrity of sensitive materials.
  
  
• Advanced Substrate Bonding different wafer sizes Facilitates bonding of advanced substrates, including silicon-on-insulator (SOI), germanium-on-insulator (GeOI), and compound semiconductors like GaAs, GaP, and InP, supporting the development of next-generation electronic and photonic devices.
  
  
• MEMS Device Fabrication
  Supports the fabrication of microelectromechanical systems (MEMS) by enabling precise bonding of thin films and substrates, essential for sensors, actuators, and other MEMS-based applications.
  
  
• CMOS-Compatible Bonding
  Ensures compatibility with complementary metal-oxide-semiconductor (CMOS) processes, allowing integration of various materials into CMOS-based devices.
  
  
• Research and Development in Semiconductor Integration
  Utilized in R&D environments, such as the University of Tokyo's Takagi & Takenaka Laboratory, to explore the integration of III-V materials and germanium on silicon substrates for advanced electronic-photonic integrated circuits (EPICs)