EVG®810 LT
The EVG®810 LT LowTemp™ plasma activation system is a single-chamber, stand-alone unit with manual operation. Designed for ex-situ processes, the system activates wafers individually, with bonding occurring outside the plasma activation chamber. The EVG®810 LT can be seamlessly integrated with EVG’s cleaning and bonding systems, enabling a manual operation direct bonding process for enhanced flexibility and precision.
Features:
- Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
- Fastest kinetics of any wafer bonding mechanism
- No wet processes required
- Highest bond strength at low temperature annealing (up to 400 °C)
- Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
- High degree of materials compatibility (including CMOS)
Applications:
- Low-Temperature Fusion and Molecular Bonding
Ideal for applications requiring direct bonding of wafers at low temperatures, such as fusion or molecular bonding, without compromising the integrity of sensitive materials. - Advanced Substrate Bonding
Facilitates bonding of advanced substrates, including silicon-on-insulator (SOI), germanium-on-insulator (GeOI), and compound semiconductors like GaAs, GaP, and InP, supporting the development of next-generation electronic and photonic devices. - MEMS Device Fabrication
Supports the fabrication of microelectromechanical systems (MEMS) by enabling precise bonding of thin films and substrates, essential for sensors, actuators, and other MEMS-based applications. - CMOS-Compatible Bonding
Ensures compatibility with complementary metal-oxide-semiconductor (CMOS) processes, allowing integration of various materials into CMOS-based devices. - Research and Development in Semiconductor Integration
Utilized in R&D environments, such as the University of Tokyo's Takagi & Takenaka Laboratory, to explore the integration of III-V materials and germanium on silicon substrates for advanced electronic-photonic integrated circuits (EPICs)