scia Cube 300/750

The scia Cube 300 is designed for large-area, high-density plasma processes. The system enables high-rate deposition with a broad range of deposition parameters. Additionally, it supports etching processes using oxygen or halogen chemistries, offering high anisotropic etching and optimized selectivity.

Key features:

• Large area processing with an array of synchronized linear microwave sources
• Independent RF bias at substrate holder for energetic substrate bombardment
• Substrate cooling (-10 °C) or heating (850 °C)
• In-situ chamber cleaning process