Phoenix

The Phoenix® system is designed to deliver high throughput and consistent uptime in demanding production environments—ranging from pilot-scale setups to full industrial manufacturing lines. Engineers and researchers choose Phoenix® for its precision and reliability in depositing uniform films on both flat and complex 3D substrates. With support for up to six independent precursor lines, the system handles a wide range of solid, liquid, and gaseous chemistries to suit diverse thin film applications. Thanks to its compact footprint and robust engineering, the Phoenix® is an ideal solution for batch production ALD, where space, consistency, and performance are critical.

<h3>Key features include:</h3>

<ul><li>Precise software control of process parameters, including temperature, flow and pressure, for defect-free coatings on even the most sensitive substrates</li><li>Patented ALD Shield™ vapor trap to prevent build-up of deposits and minimizes excess process gases from being exhausted into the environment</li><li>Large process chamber accepts GEN 2.5 substrates, multiple wafer cassettes and larger 3D objects</li><li>Low cost of ownership with minimal startup and operational costs</li><li>Compact footprint that conserves valuable clean room space</li><li>Standard recipes and ALD materials readily available</li><li>Comprehensive support and services worldwide from technical team and PhD scientists</li><li>CE, FCC, and CSA compliant with many built-in safety features</li></ul>

<h3>Technical specifications</h3>

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<td><strong>Substrate Size</strong></td>
<td>Up to 370 mm x 470 mm (Gen 2.5 Panels)<br>Up to 360 wafers – 100 mm (cassette)<br>Up to 160 wafers – 150 mm (cassette)<br>Up to 100 wafers – 200 mm (cassette)<br>Up to 40 wafers – 300 mm (cassette)<br>Custom holders for 3D objects</td>
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<td><strong>Dimensions (W x L x H)</strong></td>
<td>900 mm x 1370 mm x 1700 mm</td>
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<td><strong>Cabinet</strong></td>
<td>Vented cabinet with smoke detection</td>
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<td><strong>Power</strong></td>
<td>208 VAC 3 Phase, 8500 W (excluding pump)</td>
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<td><strong>Control</strong></td>
<td>Windows™ PC</td>
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<td><strong>Substrate Temperature</strong></td>
<td>Up to 285º C</td>
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<td><strong>Deposition Uniformity (AI₂0₃)</strong></td>
<td>≤2%</td>
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<td><strong>Vacuum Pump</strong></td>
<td>Dry pump ≥350 CFM</td>
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<td><strong>Compatibility</strong></td>
<td>Cleanroom compatible</td>
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<td><strong>Precursor Delivery System</strong></td>
<td>Standard 4 lines accommodate solid, liquid and gas precursors<br>Lines independently heated up to 200°C</td>
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<td><strong>Valves</strong></td>
<td>High speed ALD valves</td>
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<td><strong>Precursor Cylinders</strong></td>
<td>3.1 l or 600ml cylinders</td>
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<td><strong>Carrier/Venting Gas</strong></td>
<td>N₂&nbsp;or Ar MFC flow control</td>
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<td><strong>Chamber Volume (L x W x H)</strong></td>
<td>(50cm, 40cm,24cm)</td>
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