EVG®810 LT

The EVG®810 LT LowTemp™ plasma activation system is a single-chamber, stand-alone unit with manual operation. Designed for ex-situ processes, the system activates wafers individually, with bonding occurring outside the plasma activation chamber. The EVG®810 LT can be seamlessly integrated with EVG’s cleaning and bonding systems, enabling a manual operation direct bonding process for enhanced flexibility and precision.

Features

• Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
• Fastest kinetics of any wafer bonding mechanism
• No wet processes required
• Highest bond strength at low temperature annealing (up to 400 °C)
• Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
• High degree of materials compatibility (including CMOS)