scia Magna 200

The scia Magna 200 is designed for precision wafer coatings through the deposition of metals and/or dielectric layers. Its selectable sputter modes and customisable arrangements allow the system to be tailored to meet specific customer requirements. Suitable for both small-scale R&D applications and mass production, the system can be configured in a cluster layout with software-controlled automatic production for optimised efficiency.

Keay Featues:

• RF bias for conformity and stress control
• Superior uniformity with rotatable substrate holder
• Low substrate temperature with helium cooling contact and electrostatic chuck
• High deposition rates with reactive sputtering in unipolar and bipolar mode
• Variation of film properties by adjustable energetic substrate bombardment
• Co-sputtering with confocal arrangement of magnetrons

Technical Data:

• Substrate size (up to) - 200 mm dia.
• Substrate holder - Water-cooled, helium backside cooling contact, rotation up to 20 rpm, 
  optional RF bias, electrostatic clamping and wafer heating (up to 1000 °C)
• Sputter sources:
  Magnetron with rotating magnetic field or 
  up to 4 magnetrons in confocal arrangement or
  Double Ring Magnetron (DRM 400) from Fraunhofer FEP
• Sputter modes - DC in uni- or bipolar pulse mode (up to 2 x 10 kW) and/or
  RF (up to 6 kW, 13.56 MHz)
• Typical deposition rates - SiO2: 90 nm/min (single), 7 nm/min (confocal), 180 nm/min (DRM 400)
• Uniformity variation - ≤ 1.5 %*
   (single), ≤ 0.8 %*
   (confocal), ≤ 0.5 %*
   (DRM 400) *
  (σ/mean)
• Base pressure - < 1 x 10-6 mbar
• System dimensions:
  (W x D x H)
  2.70 m x 1.10 m x 1.60 m, for single chamber with cassette handling 
  (without electrical rack and pumps)
• Configurations - Single chamber with single substrate load lock or cassette handling, 
  cluster system with up to 5 process chambers and cassette handling
• Software interfaces - SECS II / GEM, OPC

Applications:

• MEMS / acoustic device manufacturing: For devices such as surface acoustic wave (SAW) and bulk acoustic wave (BAW) sensors where precise thin film layers (e.g., temperature‐compensation, piezoelectric films) are needed. 
  
  
• Optical coatings: High or low‐refractive index layers, anti-reflective coatings, bandpass filters, etc. 
  
  
• Insulating/passivation films: Deposition of dielectric layers such as Si₃N₄, SiO₂, Al₂O₃ for semiconductor devices, sensors and microelectronics. 
  
  
• Piezoelectric and electrode material coatings: For piezoelectric stacks (e.g., AlN, AlScN) and corresponding electrodes (e.g., Mo) used in sensors/actuators