scia Cube 300/750

What is the scia Cube 300?

The scia Cube 300 is designed for large-area, high-density plasma processes, handling substrates up to 300 mm x 200 mm. It uses plasma-enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE), with plasma excitation via an array of synchronised linear microwave sources and an independent RF bias at the substrate holder for energetic substrate bombardment. IES is an equipment partner for scia Systems, supplying, installing, and supporting the scia Cube 300 for customers across the UK.

What deposition capabilities does it offer?

The system enables high-rate deposition with a broad range of deposition parameters, typically used for dielectric films such as encapsulation, barrier coatings, and electric insulation (SiO2, Si3N4), optical and scratch-resistant coatings (a-C:H, DLC), and growth of nano-crystalline diamond and carbon nanotubes.What etching capabilities does it offer?The system also supports etching processes using oxygen or halogen chemistries, offering high anisotropic etching and optimised selectivity for structuring semiconductors and metals.

How is substrate handling managed?

Various substrate sizes can be transferred via an automatic vacuum load-lock system, supporting flexible processing across different substrate configurations.Where can I buy or get support for the scia Cube 300 in the UK?As an equipment partner for scia Systems, IES provides UK-based sales, installation, and engineering support for the scia Cube 300 and the wider scia Systems ion beam and plasma technology portfolio.

Key features:

• Large area processing with an array of synchronized linear microwave sources
• Independent RF bias at substrate holder for energetic substrate bombardment
• Substrate cooling (-10 °C) or heating (850 °C)
• In-situ chamber cleaning process

Technical Data:

• Substrate size (up to) 300 mm x 200 mm
• Substrate holder Water-cooled, RF bias
• Substrate temperature Alternatively cryo-cooling down to -10 °C or heating 
  up to 850 °C
• Plasma sources 2 linear microwave sources (PL400) and/or
  RF parallel plate arrangement, 13.56 MHz
• Typical deposition rates Diamond: 30 … 70 nm/h, DLC: 7.5 nm/min
• Power supply MW power: max. 9 kW, RF power: max. 0.6 kW
• Base pressure < 1 x 10-6 mbar
• System dimension:
  (W x D x H)
  1.30 m x 1.90 m x 1.50 m
  (without electrical rack and pumps)
• Configurations Single chamber, optional single substrate load lock
• Software interfaces SECS II / GEM, OPC

Applications:

• Large-area optics & photonics
  Because of its large substrate capability (300 mm × 200 mm) and ability to do both coating and etching, it’s suited for manufacturing of optical components, waveguides, gratings, mirrors, etc. For example: deposition of DLC on glass moulds, optical coatings on large glass plates. 
  
  
• Semiconductor / micro‐electronics
  When you need uniform dielectric films or etching of large area substrates (perhaps flat panels, or non‐standard size wafers) the Cube 300 offers flexible process capability (PECVD & RIE).
  
  
• MEMS & Sensor fabrication
  For example, etching of fine structures in optical substrates (quartz/fused-silica) for sensors or micro-optical components; also deposition of barrier or insulating films for MEMS where large substrate area might be beneficial.
  
  
• Advanced coatings on non‐standard/large substrates
  When substrates are large (bigger than typical 200 mm wafers) or require high temperature or low temperature processes (down to -10 °C cooling or up to 850 °C heating), the Cube provides that flexibility.
  
  
• Protective/barrier films
  For example, DLC layers for high hardness or scratch resistance (optics, moulds) or dielectric encapsulation/barrier coatings for other industries. (See application note: DLC deposition using Cube 300)