scia Magna 200

What is the scia Magna 200?

The scia Magna 200 is designed for precision wafer coatings up to 200 mm diameter through the deposition of metals and/or dielectric layers. It uses a unique Double Ring Magnetron (DRM 400) architecture from Fraunhofer FEP to achieve very high homogeneity of coatings at impressively high deposition rates.

IES is an equipment partner for scia Systems, supplying, installing, and supporting the scia Magna 200 for customers across the UK.

What sputter modes and configurations does it offer?

Its selectable sputter modes — DC in uni- or bipolar pulse mode (up to 2 x 10 kW) and/or RF (up to 6 kW, 13.56 MHz) — and customisable magnetron arrangements (single magnetron, up to four in confocal arrangement, or the DRM 400) allow the system to be tailored to meet specific customer requirements. The DRM 400's separately controlled plasma discharges from concentric inner and outer target rings deliver layer thickness variation below ±0.5% over 200 mm.

What is the advanced substrate holder capable of?

The substrate holder is water-cooled with helium backside cooling contact, rotation up to 20 rpm, and optional RF bias, electrostatic clamping, and wafer heating up to 1000°C.

How does it scale from R&D to mass production?

Suitable for both small-scale R&D applications and mass production, the system can be configured with a single wafer load lock or an automatic handling robot in a cluster layout, with software-controlled automatic production for optimised efficiency.What applications is it used for?Typical applications include piezoelectric layers (AlN, AlScN), optical high- and low-refractive coatings (SiO2, TiO2, HfO2, ZrO2, Nb2O5, Ta2O5), and passivation layers, including temperature compensation films for TC-SAW devices.

Where can I buy or get support for the scia Magna 200 in the UK?

As an equipment partner for scia Systems, IES provides UK-based sales, installation, and engineering support for the scia Magna 200 and the wider scia Systems ion beam and plasma technology portfolio.

Keay Featues:

• RF bias for conformity and stress control
• Superior uniformity with rotatable substrate holder
• Low substrate temperature with helium cooling contact and electrostatic chuck
• High deposition rates with reactive sputtering in unipolar and bipolar mode
• Variation of film properties by adjustable energetic substrate bombardment
• Co-sputtering with confocal arrangement of magnetrons

Technical Data:

• Substrate size (up to) - 200 mm dia.
• Substrate holder - Water-cooled, helium backside cooling contact, rotation up to 20 rpm, 
  optional RF bias, electrostatic clamping and wafer heating (up to 1000 °C)
• Sputter sources:
  Magnetron with rotating magnetic field or 
  up to 4 magnetrons in confocal arrangement or
  Double Ring Magnetron (DRM 400) from Fraunhofer FEP
• Sputter modes - DC in uni- or bipolar pulse mode (up to 2 x 10 kW) and/or
  RF (up to 6 kW, 13.56 MHz)
• Typical deposition rates - SiO2: 90 nm/min (single), 7 nm/min (confocal), 180 nm/min (DRM 400)
• Uniformity variation - ≤ 1.5 %*
   (single), ≤ 0.8 %*
   (confocal), ≤ 0.5 %*
   (DRM 400) *
  (σ/mean)
• Base pressure - < 1 x 10-6 mbar
• System dimensions:
  (W x D x H)
  2.70 m x 1.10 m x 1.60 m, for single chamber with cassette handling 
  (without electrical rack and pumps)
• Configurations - Single chamber with single substrate load lock or cassette handling, 
  cluster system with up to 5 process chambers and cassette handling
• Software interfaces - SECS II / GEM, OPC

Applications:

• MEMS / acoustic device manufacturing: For devices such as surface acoustic wave (SAW) and bulk acoustic wave (BAW) sensors where precise thin film layers (e.g., temperature‐compensation, piezoelectric films) are needed. 
  
  
• Optical coatings: High or low‐refractive index layers, anti-reflective coatings, bandpass filters, etc. 
  
  
• Insulating/passivation films: Deposition of dielectric layers such as Si₃N₄, SiO₂, Al₂O₃ for semiconductor devices, sensors and microelectronics. 
  
  
• Piezoelectric and electrode material coatings: For piezoelectric stacks (e.g., AlN, AlScN) and corresponding electrodes (e.g., Mo) used in sensors/actuators