Solaris 150

Solaris 150 Rapid Thermal Processor

Solaris 150 (also available in 4 inch)


The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 150mm substrates at a temperature range from RT- 1200 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.


  • Ion Implant Activation
  • Polysilicon Annealing
  • BPSG/PSG Reflow
  • Silicide Formation
  • Ti/Au Nanotube Ohmic Contact Formation
  • Contact Alloying
  • Oxidation and Nitridation
  • GaAs and III-V Ohmic Alloying


  • Sample sizes up to 6inch in diameter
  • Small foot print
  • Uniform heating, with lamps top and bottom of the sample        
  • Stable and repeatable temperature control
  • Temperature range up to 1200°C
  • Zone temperature control for enhanced process control
  • High purity quartz wafer holder and chamber
  • Gold reflectors for fast heating rate
  • Up to 6 mass flow controllers
  • Quartz liner available for BPSG/PSG processing
  • SIC coated graphite susceptor is available for compound semiconductor samples