scia Mill 200

Used for the highly uniform ion beam etching and milling of wafers up to a diameter of 200 mm diameter, the scia Mill 200 provides an automatic handing system for the loading of wafers and carriers.

It is ideal for applications such as the structuring of materials’ complex multilayers with a very low level of contamination. It is possible to integrate a SIMS end point detection system, with the ability to recognise etched species and a defined etch stop.

Typically utilised for reactive ion beam etching, ion beam etching with inert gases, and chemically assisted ion beam etching – it is possible to upgrade the system for dual ion beam deposition, adding a target holder and ion beam sputter source RF-120-e. There are cluster tools designed for high volume production available; including two cassette load locks and three process chambers.